ZrN-Based Flexible Resistive Switching Memory

Dayanand Kumar, Umesh Chand, Lew Wen Siang, Tseung Yuen Tseng*

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (107), a rapid speed (45 ns) and stable retention (104 s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.

原文English
文章編號9039564
頁(從 - 到)705-708
頁數4
期刊IEEE Electron Device Letters
41
發行號5
DOIs
出版狀態Published - 五月 2020

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