Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process

Xin Peng Wang*, Ming Fu Li, H. Y. Yu, C. Ren, W. Y. Loh, C. X. Zhu, Albert Chin, A. D. Trigg, Yee Chia Yeo, S. Biesemans, G. Q. Lo, D. L. Kwong

*Corresponding author for this work

研究成果: Conference contribution

摘要

In this work, lanthanum-incorporated refractory metal nitride is investigated as an n-type metal gate electrode with tunable work function. By adding La into HfN metal gate deposited on SiO2 gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. We also report the effective work function of TaN can be tuned to p-type with the incorporation of Al Based on our findings, we propose a feasible integration process for dual metal gate CMOS technology.

原文English
主出版物標題ICSICT-2006
主出版物子標題2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
發行者IEEE Computer Society
頁面424-426
頁數3
ISBN(列印)1424401615, 9781424401611
DOIs
出版狀態Published - 1 一月 2006
事件ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
持續時間: 23 十月 200626 十月 2006

出版系列

名字ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
國家China
城市Shanghai
期間23/10/0626/10/06

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