Wide-ratio broadband SiGe HBT regenerative frequency divider enhanced by differential TIA load

H. J. Wei*, Chin-Chun Meng, Y. W. Chang

*Corresponding author for this work

研究成果: Article

4 引文 斯高帕斯(Scopus)

摘要

A regenerative frequency divider with a differential transimpedance amplifier (TIA) active load using 0.35m SiGe HBT technology is demonstrated. The differential TIA is beneficial for higher frequency and lower sensitivity operation, and the inductive peaking enhances the bandwidth of the output buffer. From the experimental results, the operating frequency ranges from 5 to 27GHz (fmax/fmin=5.2) for a supply voltage of 5V and core power consumption of 49.5mW. The chip size is 0.86×0.822mm.

原文English
頁(從 - 到)1021-1022
頁數2
期刊Electronics Letters
43
發行號19
DOIs
出版狀態Published - 19 九月 2007

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