The feasibility of 50-mm wafer bonding AlGaInP/LED with mirror substrate is demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED.
|頁（從 - 到）||854-855|
|期刊||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|出版狀態||Published - 2000|