At 85°C under very low ± 8V and fast 100μs P/E, good memory device integrity of 2.5V initial AVth and 1.45V 10-year extrapolated retention are obtained. This was achieved in SiO2/HfON/HfAlO/TaN MONOS using very high-K (∼22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125°C.
|主出版物標題||2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers|
|出版狀態||Published - 1 十二月 2006|
|事件||2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States|
持續時間: 13 六月 2006 → 15 六月 2006
|名字||Digest of Technical Papers - Symposium on VLSI Technology|
|Conference||2006 Symposium on VLSI Technology, VLSIT|
|期間||13/06/06 → 15/06/06|