Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention

C. H. Lai, Albert Chin, H. L. Kao, K. M. Chen, M. Hong, J. Kwo, C. C. Chi

研究成果: Conference contribution

37 引文 斯高帕斯(Scopus)

摘要

At 85°C under very low ± 8V and fast 100μs P/E, good memory device integrity of 2.5V initial AVth and 1.45V 10-year extrapolated retention are obtained. This was achieved in SiO2/HfON/HfAlO/TaN MONOS using very high-K (∼22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125°C.

原文English
主出版物標題2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
頁面44-45
頁數2
DOIs
出版狀態Published - 1 十二月 2006
事件2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
持續時間: 13 六月 200615 六月 2006

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
ISSN(列印)0743-1562

Conference

Conference2006 Symposium on VLSI Technology, VLSIT
國家United States
城市Honolulu, HI
期間13/06/0615/06/06

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    Lai, C. H., Chin, A., Kao, H. L., Chen, K. M., Hong, M., Kwo, J., & Chi, C. C. (2006). Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention. 於 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers (頁 44-45). [1705208] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2006.1705208