Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics

M. Y. Yang, C. H. Huang, Albert Chin*, Chunxiang Zhu, B. J. Cho, M. F. Li, Dim Lee Kwong

*Corresponding author for this work

研究成果: Letter同行評審

36 引文 斯高帕斯(Scopus)

摘要

Using high-κ Al2O3 doped Ta2O5 dielectric, we have obtained record high MIM capacitance density of 17 fF / μm2 at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 × 10-7 A/cm2. In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 × 10-12 A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-μm MOSFET. This very high capacitance density with good MIM capacitor characteristics can significantly reduce the chip size of RF ICs.

原文English
頁(從 - 到)431-433
頁數3
期刊IEEE Microwave and Wireless Components Letters
13
發行號10
DOIs
出版狀態Published - 1 十月 2003

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