For the first time, high density (10.3 fF/μm 2 ), low voltage linearity (α=89 ppm/V 2 ) and small leakage current (1.2×10 -8 A/cm 2 or 5.8 fA/[pF·V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-κ TiTaO (κ=45) and high work-function Ir capacitor, which further improve to very high 23 fF/μm 2 density and low 81 ppm/V 2 linearity for higher speed analog/RF ICs at IGHz, using the fast α decay mechanism with increasing frequency.
|頁（從 - 到）||62-63|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1 十二月 2005|
|事件||2005 Symposium on VLSI Technology - Kyoto, Japan|
持續時間: 14 六月 2005 → 14 六月 2005