Very high κ and high density TiTaO MIM capacitors for analog and RF applications

K. C. Chiang*, Albert Chin, C. H. Lai, W. J. Chen, C. F. Cheng, B. F. Hung, C. C. Liao

*Corresponding author for this work

研究成果: Conference article同行評審

43 引文 斯高帕斯(Scopus)

摘要

For the first time, high density (10.3 fF/μm 2 ), low voltage linearity (α=89 ppm/V 2 ) and small leakage current (1.2×10 -8 A/cm 2 or 5.8 fA/[pF·V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-κ TiTaO (κ=45) and high work-function Ir capacitor, which further improve to very high 23 fF/μm 2 density and low 81 ppm/V 2 linearity for higher speed analog/RF ICs at IGHz, using the fast α decay mechanism with increasing frequency.

原文English
文章編號1469213
頁(從 - 到)62-63
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
2005
DOIs
出版狀態Published - 1 十二月 2005
事件2005 Symposium on VLSI Technology - Kyoto, Japan
持續時間: 14 六月 200514 六月 2005

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