Variable-range-hopping conduction processes in oxygen deficient polycrystalline ZnO films

Yung Lung Huang*, Shao Pin Chiu, Zhi Xin Zhu, Zhi Qing Li, Juhn-Jong Lin

*Corresponding author for this work

研究成果: Article同行評審

71 引文 斯高帕斯(Scopus)

摘要

We have fabricated oxygen deficient polycrystalline ZnO films by the rf sputtering deposition method. To systematically investigate the charge transport mechanisms in these samples, the electrical resistivities have been measured over a wide range of temperature from 300 K down to liquid-helium temperatures. We found that below about 100 K, the variable-range-hopping (VRH) conduction processes govern the charge transport properties. In particular, the Mott VRH conduction process dominates at higher temperatures, while crossing over to the Efros-Shklovskii (ES) VRH conduction process at lower temperatures. The crossover occurred at temperatures as high as a few tens degrees kelvin. Moreover, the temperature behavior of resistivity over the entire VRH conduction regime from the Mott-type to the ES-type process can be well described by a universal scaling law.

原文English
文章編號063715
頁數6
期刊Journal of Applied Physics
107
發行號6
DOIs
出版狀態Published - 14 四月 2010

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