V-band dual-conversion down-converter with low-doped N-well Schottky diode in 0.18 μm CMOS process

Yu Chih Hsiao, Chin-Chun Meng, Hung Ju Wai, Ta Wei Wang, Guo Wei Huang, Mau-Chung Chang

研究成果: Conference contribution同行評審

摘要

In this paper, a V-band dual-conversion down-converter with a silicon-based Schottky diode using low-doped N-well for DC and RF characteristics optimization is demonstrated in standard 0.18 μm CMOS technology. A triple-balanced subharmonic Schottky diode microwave mixer and a double-balanced resistive analog mixer are employed as the first conversion mixer and the second conversion mixer, respectively. As a result, the conversion gain is about -1 dB in the range of 4564 GHz. The noise figure is about 20 dB, IP 1dB is about -5 dBm and IIP3 is about 5 dBm. The total power consumption is 92.4 mW at 2.5 V supply voltage.

原文English
主出版物標題Proceedings of the 2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013
頁面415-418
頁數4
DOIs
出版狀態Published - 9 九月 2013
事件2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013 - Seattle, WA, United States
持續時間: 2 六月 20134 六月 2013

出版系列

名字Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN(列印)1529-2517

Conference

Conference2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013
國家United States
城市Seattle, WA
期間2/06/134/06/13

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