Use of random telegraph signal as internal probe to study program/erase charge lateral spread in a SONOS flash memory

Y. L. Chou, J. P. Chiu, H. C. Ma, Ta-Hui Wang, Y. P. Chao, K. C. Chen, Chih Yuan Lu

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

A novel random telegraph signal (RTS) method is proposed to study the lateral spread of injected charges in program/erase of a NOR-type SONOS flash memory. The concept is to use RTS to extract an interface trap position and to detect a local potential variation near the trap due to injection of program/erase charges. By using this method, we find that CHISEL program has a broader charge distribution than CHE program. A mismatch of CHE program electrons and band-to-band erase holes is observed directly from this method.

原文English
主出版物標題2010 IEEE International Reliability Physics Symposium, IRPS 2010
頁面960-963
頁數4
DOIs
出版狀態Published - 20 十月 2010
事件2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
持續時間: 2 五月 20106 五月 2010

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
ISSN(列印)1541-7026

Conference

Conference2010 IEEE International Reliability Physics Symposium, IRPS 2010
國家Canada
城市Garden Grove, CA
期間2/05/106/05/10

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