Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

Kun I. Chou*, Chun Hu Cheng, Po Chun Chen, Fon Shan Yeh, Albert Chin

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

原文English
文章編號121801
期刊Japanese journal of applied physics
50
發行號12
DOIs
出版狀態Published - 1 十二月 2011

指紋 深入研究「Unipolar Ni/GeO<sub>x</sub>/PbZr<sub>0:5</sub>Ti<sub>0:5</sub>O <sub>3</sub>/TaN resistive switching memory」主題。共同形成了獨特的指紋。

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