摘要
The nucleation stage toward CoSi2 with average island size of about 4 nm and uniform island size distribution is obtained from a TiN/Co/Ti/Co/SiOx/Si multilayer with the SiOx as a mediated layer by annealing at 460 °C for 240 s followed by 600 °C 240 s. It is found that Ti capping layer can enhance Co diffusion into the Si substrate at higher temperature (600 °C 240 s) annealing, which results in larger nucleus size (average grain size about 12 nm) but nonuniform nucleus size distribution. However, two-step annealing for 460 °C 240 s followed by 600 °C 240 s results in a smaller average nucleus size with better nucleus size distribution. The mechanism responsible for the discrepancy is discussed in the paper.
原文 | English |
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頁(從 - 到) | 85-89 |
頁數 | 5 |
期刊 | Thin Solid Films |
卷 | 498 |
發行號 | 1-2 |
DOIs | |
出版狀態 | Published - 1 三月 2006 |
事件 | Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - 持續時間: 12 十一月 2004 → 14 十一月 2004 |