Uniform CoSi2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layer

Juin Jie Chang, Tsung-Eong Hsien, Chuan Pu Liu, Ying Lang Wang*

*Corresponding author for this work

研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The nucleation stage toward CoSi2 with average island size of about 4 nm and uniform island size distribution is obtained from a TiN/Co/Ti/Co/SiOx/Si multilayer with the SiOx as a mediated layer by annealing at 460 °C for 240 s followed by 600 °C 240 s. It is found that Ti capping layer can enhance Co diffusion into the Si substrate at higher temperature (600 °C 240 s) annealing, which results in larger nucleus size (average grain size about 12 nm) but nonuniform nucleus size distribution. However, two-step annealing for 460 °C 240 s followed by 600 °C 240 s results in a smaller average nucleus size with better nucleus size distribution. The mechanism responsible for the discrepancy is discussed in the paper.

原文English
頁(從 - 到)85-89
頁數5
期刊Thin Solid Films
498
發行號1-2
DOIs
出版狀態Published - 1 三月 2006
事件Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
持續時間: 12 十一月 200414 十一月 2004

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