The nucleation stage toward CoSi2 with average island size of about 4 nm and uniform island size distribution is obtained from a TiN/Co/Ti/Co/SiOx/Si multilayer with the SiOx as a mediated layer by annealing at 460 °C for 240 s followed by 600 °C 240 s. It is found that Ti capping layer can enhance Co diffusion into the Si substrate at higher temperature (600 °C 240 s) annealing, which results in larger nucleus size (average grain size about 12 nm) but nonuniform nucleus size distribution. However, two-step annealing for 460 °C 240 s followed by 600 °C 240 s results in a smaller average nucleus size with better nucleus size distribution. The mechanism responsible for the discrepancy is discussed in the paper.
|頁（從 - 到）||85-89|
|期刊||Thin Solid Films|
|出版狀態||Published - 1 三月 2006|
|事件||Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - |
持續時間: 12 十一月 2004 → 14 十一月 2004