Ultrathin Si capping layer suppresses charge trapping in HfO xNy/Ge metal-insulator-semiconductor capacitors

Chao Ching Cheng*, Chao-Hsin Chien, Guang Li Luo, Chun Hui Yang, Mei Ling Kuo, Je Hung Lin, Chun Yen Chang

*Corresponding author for this work

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

In this study the authors investigated the Ge outdiffusion characteristics of Hf Ox Ny Ge metal-insulator-semiconductor capacitors to determine their charge trapping behavior. Capping the Ge substrate with an ultrathin Si layer inhibits the incorporation of Ge into the high- k bulk dielectric in the form of Ge Ox, thereby diminishing the resultant oxide charge trapping. The thermal stability of the entire capacitor structure was also improved after performing an additional Si passivation process.

原文English
文章編號012905
期刊Applied Physics Letters
90
發行號1
DOIs
出版狀態Published - 15 一月 2007

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