Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

Yang Kyu Choi, Kazuya Asano, Nick Lindert, Vivek Subramanian, Tsu Jae King, Jeffrey Bokor, Chen-Ming Hu

研究成果: Article同行評審

175 引文 斯高帕斯(Scopus)

摘要

A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide. The UTB structure eliminates leakage paths and is an extension of a conventional SOI MOSFET for deep-sub-tenth micron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18-nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance.

原文English
頁(從 - 到)254-255
頁數2
期刊IEEE Electron Device Letters
21
發行號5
DOIs
出版狀態Published - 1 五月 2000

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