Two-stage trigger silicon-controller rectifier (SCR) for radio-frequency (RF) input and output protections in nanometer technologies

Jian Hsing Lee, Yi Hsun Wu, Shao Chang Huang*, Yu Huei Lee, Ke-Horng Chen

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, a two-stage trigger (TST) scheme is proposed to implement a low-capacitance and zero-ohm input resistance electrostatic-discharge (ESD) protection device for nanometer technology applications. Besides the main trigger device diode string, the output transistor can also be used as the trigger device. The dimension of the main trigger device can be reduced for minimizing its capacitance with the additional trigger device. Moreover, the output transistor can be as the driving device without any series resistor. This is because the diode string can help to prevent integrated circuits (ICs) from ESD damage before the primary ESD protection device turns on.

原文English
頁(從 - 到)134-141
頁數8
期刊Solid-State Electronics
74
DOIs
出版狀態Published - 1 八月 2012

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