Two-dimensional arsenic precipitation by in delta doping during low temperature molecular beam epitaxy growth of GaAs or AlGaAs

T. M. Cheng*, C. Y. Chang, Albert Chin, M. F. Huang, J. H. Huang

*Corresponding author for this work

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600-900°C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al 0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications.

原文English
頁(從 - 到)2517-2519
頁數3
期刊Applied Physics Letters
64
發行號19
DOIs
出版狀態Published - 1 十二月 1994

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