Two-bit lanthanum oxide trapping layer nonvolatile flash memory

Yu Hsien Lin*, Chao-Hsin Chien, Tsung Yuan Yang, Tan Fu Lei

*Corresponding author for this work

研究成果: Article同行評審

47 引文 斯高帕斯(Scopus)

摘要

This paper describes the two-bit characteristics of SONOS-type memories prepared using lanthanum oxide, a high- k dielectric material, as the trapping layers. We used "channel hot-electron injection" for programming and "band-to-band hot-hole injection" for erasing to perform the memory operations. We observed large memory windows, a relatively high P/E speed, and good retention characteristics for these SONOS-type memories. It appears that La2 O3 is an excellent candidate for use as the trapping layer in SONOS-type memories.

原文English
期刊Journal of the Electrochemical Society
154
發行號7
DOIs
出版狀態Published - 11 六月 2007

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