Tunneling current through MIS structures with ultra-thin insulators

H. Fujioka*, H. J. Wann, D. G. Park, Y. C. King, Y. F. Chyan, M. Oshima, Chen-Ming Hu

*Corresponding author for this work

研究成果: Conference article同行評審

摘要

Leakage currents through MIS (Metal Insulator Semiconductor) structures with several ultra-thin (14-30 angstroms) insulators (silicon dioxide, silicon oxynitride, and silicon nitride) have been investigated. The leakage currents through both dioxide and oxynitride films sandwiched between n-type poly-Si gates and n-type substrates can be well fitted by the equation for the electron direct tunneling mechanism using the same effective mass and barrier height. This result indicates that incorporation of a minute amount of nitrogen atoms does not seriously affect the basic electrical properties of the oxide films. Leakage currents through ultra-thin nitride can be also fitted with the equation for the direct tunneling mechanism without assuming any extra conduction mechanisms such as hopping through defects.

原文English
頁(從 - 到)415-420
頁數6
期刊Materials Research Society Symposium - Proceedings
428
DOIs
出版狀態Published - 1 十二月 1996
事件Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
持續時間: 8 四月 199611 四月 1996

指紋 深入研究「Tunneling current through MIS structures with ultra-thin insulators」主題。共同形成了獨特的指紋。

引用此