Trilayered MoS2 metal -Semiconductor-metal photodetectors: Photogain and radiation resistance

Dung Sheng Tsai, Der Hsien Lien, Meng Lin Tsai, Sheng Han Su, Kuan Ming Chen, Jr Jian Ke, Yueh Chung Yu, Lain Jong Li, Jr Hau He

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

Trilayered MoS2 metal-semiconductor-metal (MSM) photodetectors (PDs) exhibit the photogain is up to 24 with high responsivity (∼1.04 A/W). This is because photocarriers generated at the MoS2 between two Au electrodes drift toward the metal-semiconductor interfaces due to band bending under applied bias and are then trapped at the surface state sites at the Au/MoS2 interfaces, giving rise to the decrease in Schottky barrier height. Moreover, MoS2 MSM PDs show fast operation speed; as the contact spacing reduces from 8 to 4 μm, the rise time and fall time of PDs reduce from 70 to 40 μs and from 110 to 50 μs, respectively. Trilayered MoS2 MSM PDs can operate even after 2-MeV proton illumination with ∼1011 cm-2 fluences, indicating the high radiation tolerance. This work demonstrates that trilayer MoS2 opens up a new dimension for 2-D nanomaterial applications in harsh electronics.

原文English
文章編號6553644
期刊IEEE Journal on Selected Topics in Quantum Electronics
20
發行號1
DOIs
出版狀態Published - 2014

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