Trench gate power MOSFETs with retrograde body profile

Bing-Yue Tsui*, Ming Da Wu, Tian Choy Gan, Hui Hua Chou, Zhi Liang Wu, Ching Tzong Sune

*Corresponding author for this work

研究成果: Paper

3 引文 斯高帕斯(Scopus)

摘要

Low specific on-resistance (Rds,on) and low gate capacitance are essential for trench gate power MOSFETs. In this work, we propose a simple method of retrograde body profile to improve the two parameters simultaneously. The retrograde body MOSFET (RBMOS) is realized by high energy implantation. Because the highest channel concentration locates close to drain side, the depletion width at drain side is suppressed so that the channel length can be shortened greatly without sacrificing punch-through voltage. Low thermal budget and easy trench gate process are additional benefits. Power MOSFET with channel length of 0.4μm, threshold voltage of IV, and breakdown voltage of 32V is demonstrated. Comparing with the conventional device, the specific on-resistance and the figure-of-merit can be improved by 38% and 70%, respectively.

原文English
頁面213-216
頁數4
出版狀態Published - 18 十月 2004
事件Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, Japan
持續時間: 24 五月 200427 五月 2004

Conference

ConferenceProceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)
國家Japan
城市Kitakyushu
期間24/05/0427/05/04

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  • 引用此

    Tsui, B-Y., Wu, M. D., Gan, T. C., Chou, H. H., Wu, Z. L., & Sune, C. T. (2004). Trench gate power MOSFETs with retrograde body profile. 213-216. 論文發表於 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04), Kitakyushu, Japan.