Transparent amorphous oxide semiconductors for system on panel applications

Po-Tsun Liu, Li Wei Chu, Li Feng Teng, Yang Shun Fan, Chur Shyang Fuh

研究成果: Conference contribution同行評審

4 引文 斯高帕斯(Scopus)

摘要

We demonstrate the applications of amorphous InGaZnO thin film transistor (a- IGZO TFT), extended from the pixel switcher/current driver, gate driver on array (GOA) to resistive random access memory (RRAM) technologies for system-on-panels (SoPs). The high-performance IGZO TFT with mobility of 13.5 cm2/Vs is proposed by microwave annealing process at room temperature only for 100 sec. Furthermore, an integrated gate driver scheme with the a-IGZO TFT as backbone is demonstrated in comparison with the amorphous Si TFT backplane. The rise and fall time of a-IGZO gate driver circuits is shorter than that of a-Si TFT gate driver. In addition, the ASK demodulator with a-IGZO TFT is realized successfully, and potentially to be applied for the system of low-frequency RFID tag. The study on a-IGZO RRAM reveals excellent reliability including 1000 times DC sweep endurance, 104 pulse endurance, 104 s data retention with read disturb immunity. The flexibility of a-IGZO RRAM device is also examined for flexible electronics applications.

原文English
主出版物標題Thin Film Transistors 11, TFT 2012
頁面257-268
頁數12
50
版本8
DOIs
出版狀態Published - 1 一月 2013
事件11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
持續時間: 8 十月 201210 十月 2012

出版系列

名字ECS Transactions
號碼8
50
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
國家United States
城市Honolulu, HI
期間8/10/1210/10/12

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