We have measured the NFmin of transmission lines on 106 ohm-cm proton implanted Si, Si-on-Quartz, and standard Si with top isolation oxide. Transmission lines on proton implanted Si shows the lowest NFmin of less than 0.2dB because of the low substrate loss due to the high resistivity. The proton implantation did not contribute to excess shot noise induced by carriers trapping and de-trapping because of the very small diffusion length to metal line.
|頁（從 - 到）||763-766|
|期刊||IEEE MTT-S International Microwave Symposium Digest|
|出版狀態||Published - 1 一月 2001|