Transmission line noise from standard and proton-implanted Si

K. T. Chan, Albert Chin, C. M. Kwei, D. T. Shien, W. J. Lin

研究成果: Article同行評審

42 引文 斯高帕斯(Scopus)


We have measured the NFmin of transmission lines on 106 ohm-cm proton implanted Si, Si-on-Quartz, and standard Si with top isolation oxide. Transmission lines on proton implanted Si shows the lowest NFmin of less than 0.2dB because of the low substrate loss due to the high resistivity. The proton implantation did not contribute to excess shot noise induced by carriers trapping and de-trapping because of the very small diffusion length to metal line.

頁(從 - 到)763-766
期刊IEEE MTT-S International Microwave Symposium Digest
出版狀態Published - 1 一月 2001

指紋 深入研究「Transmission line noise from standard and proton-implanted Si」主題。共同形成了獨特的指紋。