Transient-induced latchup in CMOS ICs under electrical fast-transient test

Cheng Cheng Yen*, Ming-Dou Ker, Tung Yang Chen

*Corresponding author for this work

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

The occurrence of transient-induced latchup (TLU) in CMOS integrated circuits (ICs) under electrical fast-transient (EFT) tests is studied. The test chip with the parasitic silicon-controlled-rectifier (SCR) structure fabricated by a 0.18-μ m CMOS process was used in EFT tests. For physical mechanism characterization, the specific swept-back current caused by the minority carriers stored within the parasitic PNPN structure of CMOS ICs is the major cause of TLU under EFT tests. Different types of board-level noise filter networks are evaluated to find their effectiveness for improving the immunity of CMOS ICs against TLU under EFT tests. By choosing the proper components in each noise filter network, the TLU immunity of CMOS ICs against EFT tests can be greatly improved.

原文English
文章編號4799110
頁(從 - 到)255-264
頁數10
期刊IEEE Transactions on Device and Materials Reliability
9
發行號2
DOIs
出版狀態Published - 1 六月 2009

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