In order to study how a local trap degrades data retention characteristics of floating gate nonvolatile memory cell, a general-purpose Single-Electron Device Simulator (SEDS) developed for Si-dot is improved to carry out a very wide range transient analysis from 0.1 pico-seconds to 10 years. As a result, it is found that the data retention is degraded by the direct tunneling enhanced due to positive charge stored at the trap inside the inter-poly dielectric but not by trap-assisted tunneling.
|出版狀態||Published - 1 十二月 2008|
|事件||2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan|
持續時間: 9 九月 2008 → 11 九月 2008
|Conference||2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008|
|期間||9/09/08 → 11/09/08|