## 摘要

A new method for characterizing the evolution of oxide charge (Q _{T} ) generation during program/erase (P/E) cycles is developed. The concentration of Q _{T} can be separated from the floating gate charge (O _{FG} ) by statistically analyzing the distribution of transconductance reduction (ΔG _{m,max} ) after P/E cycles. The effect of the number and position of discrete Q _{T} the distribution of ΔG _{m,max} is studied. The cycling dependence of the Qj generation is given by a fractional equation that includes a power of the number of P/E cycles in the denominator. For fewer than 30k cycles, the equation can be simplified as a power-law equation in the number of cycles with a power factor of 0.58. For more than 30k cycles, the Q _{T} generation gradually goes to a plateau value Q _{0} = 1.5 × 10 ^{20} cm ^{-3} . It is indicated that the Q _{T} -generation is limited by the concentration of inherent weak bonding points inside SiO _{2} or the Si/SiO _{2} interface. The temperature dependence of the Q _{T} generation is also provided. The activation energy (E _{A} ) of the Q _{T} generation is approximately 0.1 eV, which is compatible with the E _{A} value of electron traps creation in SiO _{2} .

原文 | English |
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文章編號 | 8631191 |

頁（從 - 到） | 1255-1261 |

頁數 | 7 |

期刊 | IEEE Transactions on Electron Devices |

卷 | 66 |

發行號 | 3 |

DOIs | |

出版狀態 | Published - 1 三月 2019 |