Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation

S. E. Babcock*, King-Ning Tu

*Corresponding author for this work

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45 引文 斯高帕斯(Scopus)

摘要

Contact reaction and Schottky barrier heights on Si were studied using Ti-W alloys of increasing W concentration (Ti, Ti8W2, Ti 4W6, Ti2W8) in order to determine the effect of alloy composition on Schottky contact behavior. Glancing angle x-ray diffraction, Rutherford backscattering spectroscopy, and scanning electron microscopy were used to analyze the contact reaction. Schottky barrier heights were determined from the I-V behavior of circular diodes. Four-point probe measurements were used to compute the film electrical resistivity. Our experiments show that the addition of small amounts of W has raised the formation temperature of Ti silicides and maintained a low barrier height (∼0.55 eV) Schottky contact on n-type Si up to 550 °C. A bilayer shallow contact metallurgy Si/Ti8W2/Ti3 W 7/Al which provides a low barrier metal contact to n-type Si as well as an effective diffusion barrier between Al and Si is proposed as a result of this study.

原文English
頁(從 - 到)6898-6905
頁數8
期刊Journal of Applied Physics
53
發行號10
DOIs
出版狀態Published - 1 十二月 1982

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