Time-resolved photoluminescence of isoelectronic traps in ZnSe 1-x Tex semiconductor alloys

Y. C. Lin, Wu-Ching Chou, W. C. Fan, J. T. Ku, F. K. Ke, W. J. Wang, S. L. Yang, Wei-Kuo Chen, Wen-Hao Chang, C. H. Chia

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-x Tex. As the Te concentration increases, the stretching exponent β initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.

原文English
文章編號241909
期刊Applied Physics Letters
93
發行號24
DOIs
出版狀態Published - 29 十二月 2008

指紋 深入研究「Time-resolved photoluminescence of isoelectronic traps in ZnSe <sub>1-x</sub> Te<sub>x</sub> semiconductor alloys」主題。共同形成了獨特的指紋。

引用此