Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes

Yun Ju Wang, Yi Ting Huang, Bing Yue Tsui*, Chao Hsin Chien

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

Effects of NO annealing and isolation structure on the time-dependent dielectric breakdown of gate oxide is studied. NO annealing can reduce the interface state density effectively but the nitrogen in oxide bulk degrades the electric field of 10-year TDDB by 1 MV/cm. LOCOSiC isolation also degrades the electric field by 0.3 MV/cm. The breakdown positions of the LOCOSiC isolation sample distribute along the periphery of the isolation because the gate oxide grown on the Ar ion implantation induced damaged zone is poor. Fortunately, the TDDB degradation due to LOCOSiC process is not sever and the 10-year TDDB electric field of 6 MV/cm is acceptable in most applications.

原文English
主出版物標題2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728161693
DOIs
出版狀態Published - 20 七月 2020
事件2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020 - Singapore, Singapore
持續時間: 20 七月 202023 七月 2020

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2020-July

Conference

Conference2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
國家Singapore
城市Singapore
期間20/07/2023/07/20

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