Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

Yu Sheng Chiu, Tai Ming Lin, Hong Quan Nguyen, Yu Chen Weng, Chi Lang Nguyen, Yueh Chin Lin, Hung Wei Yu, Edward Yi Chang*, Ching Ting Lee

*Corresponding author for this work

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (Rc) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low Rc.

原文English
文章編號011216
期刊Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
32
發行號1
DOIs
出版狀態Published - 1 一月 2014

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