Through-wafer electroplated copper interconnect with ultrafine grains and high density of nanotwins

Luhua Xu*, Pradeep Dixit, Jianmin Miao, John H L Pang, Xi Zhang, King-Ning Tu, Robert Preisser

*Corresponding author for this work

研究成果: Article同行評審

69 引文 斯高帕斯(Scopus)

摘要

High aspect ratio (∼15) and ultrafine pitch (∼35 μm) through-wafer copper interconnection columns were fabricated by aspect-ratio-dependent electroplating. By controlling the process parameters, ultrafine copper grains with nanoscale twins (twin lamellar width ∼20 nm) were obtained in the copper columns. Transmission electron microscope reveals that the density of these nanotwins depends on the location along the length of the columns. The highest twin density was achieved at the bottom of the column where the electroplating starts. The presence of higher density of the nanotwins yields significant higher hardness (∼2.4 GPa) than that with lower twin density (∼1.8 GPa). The electrical conductivity of the electroplated copper (2.2 μ cm) is retained comparable to the pure copper.

原文English
文章編號033111
期刊Applied Physics Letters
90
發行號3
DOIs
出版狀態Published - 29 一月 2007

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