Through-silicon-via characterization and modeling using a novel one-port de-embedding technique

An Sam Peng, Ming Hsiang Cho, Yueh Hua Wang, Meng Fang Wang, David Chen, Lin-Kun Wu

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

In this paper, a novel and simple one-port de-embedding technique has been applied to through-silicon-via (TSV) characterization and modeling. This method utilized pad, via, and line structures to extract the equivalent circuit model of TSV. The main advantage of this deembedding method is that it can reduce the chip area to fabricate test element groups (TEGs) for measurements while keeping S-parameter measurement accuracies. We also analyzed the electrical characteristics of substrate coupling and TSV equivalent impedance. Our results shows good agreements between measurement data and the equivalent circuit model up to 20 GHz.

原文English
頁(從 - 到)1289-1293
頁數5
期刊IEICE Transactions on Electronics
E96-C
發行號10
DOIs
出版狀態Published - 1 一月 2013

指紋 深入研究「Through-silicon-via characterization and modeling using a novel one-port de-embedding technique」主題。共同形成了獨特的指紋。

引用此