Three dimensional Auger elemental distributions have been constructed from the combination of high spatial resolution, two dimensional Auger maps obtained at multiple sputter depths. These three dimensional elemental distributions have been used to compare the interfacial regions for two kinds of silicon on insulator wafers. It is clearly seen that silicon oxide is formed as an island structure for the SIMOX specimen, whereas the UNIBOND specimen has a featureless structure at the SiSi O2 interface. Linear least squares fitting from several two dimensional maps obtained at different energies have been used to produce energy dispersive spectra from specific regions of high spatial resolution Auger maps. This technique was used to examine the interface region exposed from sputter craters through a silicon dioxide layer on a silicon substrate and through a Ni silicide film on a silicon substrate. The Si LVV spectra for the elemental silicon, oxide, and silicide components extracted from the multiple energy two dimensional maps can be used to map the chemical components in the interfacial regions.
|頁（從 - 到）||668-672|
|期刊||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版狀態||Published - 2008|