Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer

Yi Gin Yang, Bing Yue Tsui

研究成果: Conference contribution同行評審

6 引文 斯高帕斯(Scopus)

摘要

It is known that high dielectric constant (high-k) dielectric deposition on ultrathin GeO2 would damage the quality of GeO2 and degrade the interface. Both Al2O3 and AlN have been proposed as intermediate layer between high-k dielectric and GeO2, but the process has not been optimized. In this work, it is observed that the N2-plasma-nitrided Al2O3 is a good intermediate layer to suppress GeOx volatilization. Thin effective oxide thickness (∼0.5 nm), low leakage current (<4×10-2 A/cm2), and acceptable interface state density (∼4×1011 1/eV/cm2) have been demonstrated by the HfO2/N2-plasma-nitrided Al2O3/GeOx/Ge MIS structure.

原文English
主出版物標題2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479973750
DOIs
出版狀態Published - 3 六月 2015
事件2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan
持續時間: 27 四月 201529 四月 2015

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings
2015-June
ISSN(列印)1930-8868

Conference

Conference2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
國家Taiwan
城市Hsinchu
期間27/04/1529/04/15

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