Thermochemical reaction of ZrOx(Ny) interfaces on Ge and Si substrates

Chao Ching Cheng*, Chao-Hsin Chien, Je Hung Lin, Chun Yen Chang, Guang Li Luo, Chun Hui Yang, Shih Lu Hsu

*Corresponding author for this work

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

We have studied the thermochemical characteristics of ZrO x(Ny)/Ge and Si interfaces by employing postdeposition annealing. We found that Ge oxide species severely desorbed from the inherent interfacial layer, which was speculated to retard the formation of Zr germanate during high-temperature processing. These unique features enable ZrO x(Ny)/Ge gate stack to show a better equivalent-oxide-thickness scalability as compared to ZrOx(N y)/Si gate stack. However, the volatilization of GeO x-contained interfacial layer also caused the formation of small pits and/or holes in the overlying ZrOx(Ny) gate dielectrics, which was expected to cause deterioration in the electrical properties of fabricated high-k/Ge devices.

原文English
文章編號012905
期刊Applied Physics Letters
89
發行號1
DOIs
出版狀態Published - 14 七月 2006

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