Thermally stable NiSi2 for Ge contact with schottky barrier height modulation capability

R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution同行評審

摘要

Agglomeration resistant contact of NiSi2 with Ge substrates has been performed using stacked silicidation process. Stable Schottky barrier height at NiSi2/Ge interface with ideality factor of less than 1.2 can be maintained up to annealing temperature of 500°C. Incorporation of P atom at NiSi2/Ge interface modulates the Schottky barrier height to produce Ohmic contact.

原文English
主出版物標題SiGe, Ge, and Related Compounds 5
主出版物子標題Materials, Processing, and Devices
頁面217-221
頁數5
版本9
DOIs
出版狀態Published - 2012
事件5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
持續時間: 7 十月 201212 十月 2012

出版系列

名字ECS Transactions
號碼9
50
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
國家United States
城市Honolulu, HI
期間7/10/1212/10/12

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