Thermal stability of poly-Si phototransistors incorporating Ge quantum dots for near-ultraviolet light detection and amplification

I. H. Chen*, S. S. Tseng, Pei-Wen Li

*Corresponding author for this work

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

We investigated temperature-dependent (300 K-120 K) subthreshold characteristics and transient photoresponses of poly-Si phototransistors (PTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide for near-ultraviolet light detection and amplification. Incorporating Ge QDs into the poly-Si PT structure improves the device thermal stability in the subthreshold characteristics and transient photoresponse, due to better light absorption efficiency and photovoltaic effect suppression.

原文English
頁(從 - 到)1674-1676
頁數3
期刊IEEE Photonics Technology Letters
21
發行號22
DOIs
出版狀態Published - 15 十一月 2009

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