Thermal-stability improvement of LaON thin film formed using nitrogen radicals

S. Sato*, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

*Corresponding author for this work

研究成果: Article

10 引文 斯高帕斯(Scopus)

摘要

This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. The issue of La2O3 is EOT increase after high temperature post metarization annealing (PMA). To overcome this problem, we incorporated nitrogen in La2O3. The EOT increase on the TaN/LaON and W/LaON structure is reduced compared with that on the W/La2O3 structure. This is due to nitrogen in LaON and SiNx-rich interfacial layer which seems to remain after high temperature annealing. W/LaON nMOSFET is also successfully fabricated. Peak electron mobility of 96.2 cm2/V s was obtained.

原文English
頁(從 - 到)1894-1897
頁數4
期刊Microelectronic Engineering
84
發行號9-10
DOIs
出版狀態Published - 九月 2007

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    Sato, S., Tachi, K., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2007). Thermal-stability improvement of LaON thin film formed using nitrogen radicals. Microelectronic Engineering, 84(9-10), 1894-1897. https://doi.org/10.1016/j.mee.2007.04.088