The binding energy and the density-of-states spectrum of resonant impurity states in quantum well structure have been theoretically studied with variation of the impurity position taken into account, using the multisubband model and the resolvent operator technique. Calculations for the 2p0 resonant state in a GaAs-Al0.2Ga0.8As quantum well have been performed. It has been found that there can be a considerable resonant coupling in the 2p0 state, causing a ∼0.1 ps capture or escape time of electrons between the 2p0 localized state and the first subband states. The maximum shift of the impurity energy is in general of the order of 0.1 meV, much smaller than the maximum binding energy of the 2p0 state.
|頁（從 - 到）||1-7|
|期刊||Physical Review B - Condensed Matter and Materials Physics|
|出版狀態||Published - 15 八月 2002|