Theory of resonant states of hydrogenic impurities in quantum wells

Shun-Tung Yen*

*Corresponding author for this work

研究成果: Article

13 引文 斯高帕斯(Scopus)

摘要

The binding energy and the density-of-states spectrum of resonant impurity states in quantum well structure have been theoretically studied with variation of the impurity position taken into account, using the multisubband model and the resolvent operator technique. Calculations for the 2p0 resonant state in a GaAs-Al0.2Ga0.8As quantum well have been performed. It has been found that there can be a considerable resonant coupling in the 2p0 state, causing a ∼0.1 ps capture or escape time of electrons between the 2p0 localized state and the first subband states. The maximum shift of the impurity energy is in general of the order of 0.1 meV, much smaller than the maximum binding energy of the 2p0 state.

原文English
文章編號075340
頁(從 - 到)1-7
頁數7
期刊Physical Review B - Condensed Matter and Materials Physics
66
發行號7
DOIs
出版狀態Published - 15 八月 2002

指紋 深入研究「Theory of resonant states of hydrogenic impurities in quantum wells」主題。共同形成了獨特的指紋。

  • 引用此