The understanding of the bulk trigate MOSFET's reliability through the manipulation of RTN traps

E. R. Hsieh, P. C. Wu, Steve S. Chung, C. H. Tsai, R. M. Huang, C. T. Tsai

研究成果: Conference contribution同行評審

摘要

The manipulation of RTN-trap profiling bas been experimentally demonstrated on both planar and trigate MOSFETs. It was achieved by a simple experimental method to take the 2D profiling of the RTN-trap in both oxide depth (vertical) and channel (lateral) directions in the gate oxide. Then, by arranging various 2D fields for the device stress condition, the positions of RTN traps can be precisely controlled. This is the first being reported that the positions of RTN-traps can be manipulated, showing significant advances for the understanding of the trap generation and the impact on the device reliability. Results have demonstrated why trigate exhibits much worse reliability than the planar ones.

原文English
主出版物標題2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs
出版狀態Published - 12 八月 2013
事件2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan
持續時間: 22 四月 201324 四月 2013

出版系列

名字2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
國家Taiwan
城市Hsinchu
期間22/04/1324/04/13

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