The understanding of breakdown path in both high-k metal-gate CMOS and resistance RAM by the RTN measurement

Steve S. Chung*

*Corresponding author for this work

研究成果: Conference contribution同行評審

指紋 深入研究「The understanding of breakdown path in both high-k metal-gate CMOS and resistance RAM by the RTN measurement」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science