The study of compensative structure assisted convex and concave corner structures etching by inductively coupled plasma-reactive ion etch (ICP-RIE)

Yu Hsin Lin*, Yuan Chieh Cheng, Nien Nan Chu, Wen-Syang Hsu, Yu Hsiang Tang, Po Li Chen, Chih Chung Yang, Ming Hua Hsiao, Chien Nan Hsiao

*Corresponding author for this work

研究成果: Conference contribution

摘要

In this paper, the compensative structure assisted the convex and concave corner structures etch in inductively coupled plasma reactive ion etch (ICP-RIE) have been studied. In anisotropic silicon etching, under the Bosch patent, sequentially alternating etch and passivation cycles can easily achieve high aspect ratio silicon structures. But, the feature size of the convex and concave corner structures are difficult to maintain as original design at the bottom position in deep etch, due to non-vertical movement plasma etch. A compensative structure can obstruct the non-vertical plasma to etch the convex corner structures and reduce the etch lag effect during the etch process leading to better profile at deep etch. The current study systematically investigates plasma condition to verify feasibility of the proposed method, and discusses effect of the gap between compensative structure and convex and concave corner structures at three different gaps of 15, 10, 5μm. It demonstrate the compensative structure with small gap in front of the convex and concave corner structures have better profile at deep ICP-RIE etching.

原文English
主出版物標題2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面491-493
頁數3
ISBN(電子)9781467366953
DOIs
出版狀態Published - 1 七月 2015
事件10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 - Xi'an, China
持續時間: 7 四月 201511 四月 2015

出版系列

名字2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015

Conference

Conference10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
國家China
城市Xi'an
期間7/04/1511/04/15

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    Lin, Y. H., Cheng, Y. C., Chu, N. N., Hsu, W-S., Tang, Y. H., Chen, P. L., Yang, C. C., Hsiao, M. H., & Hsiao, C. N. (2015). The study of compensative structure assisted convex and concave corner structures etching by inductively coupled plasma-reactive ion etch (ICP-RIE). 於 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 (頁 491-493). [7147475] (2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2015.7147475