The reliability study of III-V solar cell with copper based contacts

Ching Hsiang Hsu, Edward Yi Chang*, Hsun Jui Chang, Jer Shen Maa, Krishna Pande

*Corresponding author for this work

研究成果: Letter

3 引文 斯高帕斯(Scopus)

摘要

The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10-6 ω cm2. The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 °C) and a high DC current (6.5 × 10-4 mA/μm2) stress test. Overall, the solar cell adopting these Cu based contacts remained quite stable and demonstrated excellent performances after these reliability tests.

原文English
頁(從 - 到)174-177
頁數4
期刊Solid-State Electronics
114
DOIs
出版狀態Published - 1 十二月 2015

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