The random dopant and gate oxide variations in trigate MOSFETs

Steve S. Chung*

*Corresponding author for this work

研究成果: Conference contribution

摘要

This paper presents a methodology to investigate the dopant fluctuation and the gate leakage fluctuation of trigate devices via a purely experimental approach. The dopant fluctuation is known to be reduced in a trigate comparing to a planar transistor, while it depends on the Fin-height. Another source of variation is the gate leakage variation caused by the surface roughness effect. Both types of variation create major challenges for putting the trigate into the manufacturing. The method to understand these effects and the experimental procedures will be addressed. A measure of the variation by the Pelgrom plot will be specifically addressed.

原文English
主出版物標題2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479923342
DOIs
出版狀態Published - 13 三月 2014
事件2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China
持續時間: 18 六月 201420 六月 2014

出版系列

名字2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Conference

Conference2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
國家China
城市Chengdu
期間18/06/1420/06/14

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