The potential of poly-Si nanowire FETs featuring independent double-gated configuration for nonvolatile memory applications

Wei Chen Chen*, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

研究成果: Conference contribution同行評審

指紋 深入研究「The potential of poly-Si nanowire FETs featuring independent double-gated configuration for nonvolatile memory applications」主題。共同形成了獨特的指紋。

Engineering & Materials Science