The path finding of gate dielectric breakdown in advanced high-k metal-gate CMOS devices

Steve S. Chung*

*Corresponding author for this work

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

The breakdown path induced by BTI stress in a MOSFET device can be traced from the experiment. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path, i.e., from the leakage by measuring the Ig current as a function of time. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths will be presented. The soft-breakdown path is in a shape like spindle, while the hard breakdown behaves like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.

原文English
主出版物標題Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面360-364
頁數5
ISBN(電子)9781479983636
DOIs
出版狀態Published - 30 九月 2015
事件11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore
持續時間: 1 六月 20154 六月 2015

出版系列

名字Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Conference

Conference11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
國家Singapore
城市Singapore
期間1/06/154/06/15

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