@inproceedings{04b4292c767b4976a456fbae098728a7,
title = "The path finding of gate dielectric breakdown in advanced high-k metal-gate CMOS devices",
abstract = "The breakdown path induced by BTI stress in a MOSFET device can be traced from the experiment. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path, i.e., from the leakage by measuring the Ig current as a function of time. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths will be presented. The soft-breakdown path is in a shape like spindle, while the hard breakdown behaves like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.",
keywords = "BTI, hard breakdown, high-k, Leakage path, soft-breakdown, TDDB lifetime",
author = "Chung, {Steve S.}",
year = "2015",
month = sep,
day = "30",
doi = "10.1109/EDSSC.2015.7285125",
language = "English",
series = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "360--364",
booktitle = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",
address = "United States",
note = "null ; Conference date: 01-06-2015 Through 04-06-2015",
}