Diamond deposition on mirror-polished polycrystalline silicon substrates which have grains in various orientations has been investigated using electron backscatter diffraction (EBSD) method with scanning electron microscopy (SEM). Diamond was deposited by microwave plasma chemical vapor deposition with application of a negative bias voltage on the substrate. The evidence from systematic SEM observations shows that silicon orientation determined by EBSD has a strong effect on diamond nucleation. In general, the diamond nucleation density on Si grains oriented close to <100> is the highest, while it is the lowest for those grains close to <111>, under the same experimental conditions for deposition. The same phenomena have been observed in the range of methane concentration from 2% to 4% in hydrogen.
|頁（從 - 到）||1753-1756|
|期刊||Diamond and Related Materials|
|出版狀態||Published - 1 十一月 2005|
|事件||Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue - |
持續時間: 11 五月 2005 → 14 五月 2005