The orientation effect of silicon grains on diamond deposition

Yin Hao Su, Li Chang*, Hou Guang Chen, Jhih Kun Yan, Ting Chou

*Corresponding author for this work

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Diamond deposition on mirror-polished polycrystalline silicon substrates which have grains in various orientations has been investigated using electron backscatter diffraction (EBSD) method with scanning electron microscopy (SEM). Diamond was deposited by microwave plasma chemical vapor deposition with application of a negative bias voltage on the substrate. The evidence from systematic SEM observations shows that silicon orientation determined by EBSD has a strong effect on diamond nucleation. In general, the diamond nucleation density on Si grains oriented close to <100> is the highest, while it is the lowest for those grains close to <111>, under the same experimental conditions for deposition. The same phenomena have been observed in the range of methane concentration from 2% to 4% in hydrogen.

原文English
頁(從 - 到)1753-1756
頁數4
期刊Diamond and Related Materials
14
發行號11-12
DOIs
出版狀態Published - 1 十一月 2005
事件Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue -
持續時間: 11 五月 200514 五月 2005

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