The observation of trapping and detrapping effects in high-k gate dielectric mOSFETs by a new gate current random telegraph noise (I G-RTN) approach

C. M. Chang, Steve S. Chung, Y. S. Hsieh, L. W. Cheng, C. T. Tsai, G. H. Ma, S. C. Chien, S. W. Sun

研究成果: Conference contribution同行評審

37 引文 斯高帕斯(Scopus)

摘要

A new method, called gate current Random Telegraph Noise (IG RTN), was developed to analyze the oxide quality and reliability of high-k gate dielectric MOSFETs. First, a single electron trapping/detrapping from process induced trap in nMOSFET was observed and the associated physical mechanism was proposed. Secondly, IG RTN has also been successfully applied to differentiate the difference in electron tunneling mechanism for a device under high-field or low-field stress. Finally, the soft- breakdown (SBD) behavior of a device can be clearly identified. Its IG RTN characteristic is different from that before soft-breakdown. It was found that SBD will indeed induce extra leakage current as a result of an additional breakdown path.

原文English
主出版物標題2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
出版狀態Published - 1 十二月 2008
事件2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
持續時間: 15 十二月 200817 十二月 2008

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2008 IEEE International Electron Devices Meeting, IEDM 2008
國家United States
城市San Francisco, CA
期間15/12/0817/12/08

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