The influence of NH3 plasma treatment on Al2O 3/HfO2 gate dielectrics of TFTs with atmospheric pressure plasma jet deposited IGZO channel

Hau Yuan Huang, Chien Hung Wu*, Shui Jinn Wang, Kow-Ming Chang, Hsin Yu Hsu

*Corresponding author for this work

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

Indium-gallium-zinc-oxide (IGZO) thin-film transistors are fabricated by atmospheric pressure plasma jet (APPJ) technique. HfO2 (25 nm) and Al2O3 (25 nm) are used as the gate dielectric stack. NH3 plasma treatment is applied to optimize the device performance by reducing the gate dielectric leakage and increasing the oxide capacitance. The best performance of the APPJ IGZO TFT is obtained with a 30W-60s NH3 plasma treatment with field-effect mobility of 6.1 cm2/V-s, subthreshold swing of 0.19 V/dec, and on/off current ratio of 108.

原文English
主出版物標題72nd Device Research Conference, DRC 2014 - Conference Digest
發行者Institute of Electrical and Electronics Engineers Inc.
頁面161-162
頁數2
ISBN(列印)9781479954056
DOIs
出版狀態Published - 1 一月 2014
事件72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
持續時間: 22 六月 201425 六月 2014

出版系列

名字Device Research Conference - Conference Digest, DRC
ISSN(列印)1548-3770

Conference

Conference72nd Device Research Conference, DRC 2014
國家United States
城市Santa Barbara, CA
期間22/06/1425/06/14

指紋 深入研究「The influence of NH<sub>3</sub> plasma treatment on Al<sub>2</sub>O <sub>3</sub>/HfO<sub>2</sub> gate dielectrics of TFTs with atmospheric pressure plasma jet deposited IGZO channel」主題。共同形成了獨特的指紋。

  • 引用此

    Huang, H. Y., Wu, C. H., Wang, S. J., Chang, K-M., & Hsu, H. Y. (2014). The influence of NH3 plasma treatment on Al2O 3/HfO2 gate dielectrics of TFTs with atmospheric pressure plasma jet deposited IGZO channel. 於 72nd Device Research Conference, DRC 2014 - Conference Digest (頁 161-162). [6872347] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872347