The Impact of Layout Dependent Intrinsic Parasitic RLC on High Frequency Performance in 3T and 4T Multi-finger nMOSFETs

Jyh-Chyurn Guo, Jyun Rong Ou, Jinq Min Lin

研究成果: Conference contribution同行評審

摘要

A new observation of significant differences in the high frequency device parameters and performance like fT and fMAX is identified from the comparison of 3-terminal (3T) and 4-terminal (4T) multi-finger (MF) nMOSFETs. Through an extensive characterization on the intrinsic Z- and Y-parameters, it is found that the major impact comes from the particular increase of intrinsic parasitic resistances and inductances at the source terminal, namely Rs, int and Ls, int in the 4T MF MOSFETs. The proposed analytical models as a function of key device parameters incorporating the influence of the intrinsic parasitic RLC through high frequencies can accurately predict fT and fMAX degradation in 4T MF nMOSFETs as well as the complicated layout dependent effects. The experimental results and analytical models can be useful to facilitate MF devices layout optimization for high frequency design and performance improvement.

原文English
主出版物標題2019 IEEE MTT-S International Microwave Symposium, IMS 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁面963-966
頁數4
ISBN(電子)9781728113098
DOIs
出版狀態Published - 1 六月 2019
事件2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, United States
持續時間: 2 六月 20197 六月 2019

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
2019-June
ISSN(列印)0149-645X

Conference

Conference2019 IEEE MTT-S International Microwave Symposium, IMS 2019
國家United States
城市Boston
期間2/06/197/06/19

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