The impact of layout dependent effects on mobility and flicker noise in nanoscale multifinger nMOSFETs for RF and analog design

Jyh-Chyurn Guo, Yi Zen Lo, Jyun Rong Ou

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

The impact of layout dependent effects on multi-finger (MF) device parameters, such as transconductance (gm), effective mobility (μeff), source resistance (RS), and flicker noise was investigated in this paper to facilitate RF and analog optimization design. MF devices with wide poly-to-poly (PO-PO) space can achieve higher μeff and two-end source line layout can effectively reduce RS to improve gm. However, the wide PO-PO space yielding higher μeff cannot ensure lower flicker noise in nMOSFETs, which is dominated by number fluctuation model.

原文English
主出版物標題2016 IEEE MTT-S International Microwave Symposium, IMS 2016
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509006984
DOIs
出版狀態Published - 9 八月 2016
事件2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States
持續時間: 22 五月 201627 五月 2016

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
2016-August
ISSN(列印)0149-645X

Conference

Conference2016 IEEE MTT-S International Microwave Symposium, IMS 2016
國家United States
城市San Francisco
期間22/05/1627/05/16

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